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| MUR6020PT, MUR6030PT Ultra Fast Recovery Diodes Dimensions TO-247AD A C(TAB) A C A C A Dim. A B C D E F G H Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 VRRM V 200 300 J K L M N MUR6020PT MUR6030PT Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=115oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 50 60 375 325 350 290 310 530 510 420 400 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 125 0.8...1.2 6 W Nm g MUR6020PT, MUR6030PT Ultra Fast Recovery Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=30A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 200 50 5 0.85 1.10 0.72 4.2 1 0.25 Unit uA uA mA V V m K/W ns A IR VF VTO rT RthJC RthCH trr IRM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC _ VR=100V; IF=30A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C o 35 4 50 5 FEATURES * International standard package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Rectifiers in switch mode power supplies (SMPS) * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling MUR6020PT, MUR6030PT Ultra Fast Recovery Diodes 120 A 100 IF 80 60 40 20 0 0.0 0.0 10 TVJ=150C TVJ=100C TVJ= 25C 0.8 uC Qr 0.6 TVJ= 100C VR = 100V 30 TVJ= 100C A V = 100V R 25 IRM 20 0.4 IF= 15A IF= 35A IF= 70A IF= 15A IF= 35A IF= 70A 15 10 0.2 5 0 100 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt 0.4 0.8 VF 1.2 V Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 70 ns 60 trr 50 40 TVJ= 100C VR = 100V Fig. 3 Typ. peak reverse current IRM versus -diF/dt 6 V 5 VFR 4 3 tfr TVJ= 100C IF = 35A VFR 1.6 1.4 Kf 1.2 1.0 1.8 us 1.5 tfr 1.2 0.9 0.6 0.3 0.0 A/us 800 30 0.8 0.6 0.4 0 40 80 120 C 160 TVJ IRM Qr 20 10 0 0 200 400 IF= 15A IF= 35A IF= 70A 2 1 0 600 A/us 800 -diF/dt 1000 0 200 400 600 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1.2 K/W 1.0 0.8 ZthJC 0.6 0.4 0.2 0.0 0.001 Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 0.01 0.1 1 t s 10 Fig. 7 Transient thermal impedance junction to case |
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